Tunnel field-effect transistors for sensitive terahertz detection
نویسندگان
چکیده
Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency raised sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging requires alternative protocols. Here, we address this challenge tunnel field-effect transistors made bilayer graphene (BLG). Taking advantage BLG’s electrically tunable band structure, create lateral junction couple it an antenna exposed THz radiation. incoming then down-converted nonlinearity, resulting in high responsivity (>4 kV/W) low-noise (0.2 pW/ $$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic interband tunneling regime can raise detectors’ few orders magnitude, agreement with developed theory. Our work demonstrates potential application detection reveals BLG as promising platform therefor.
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2021
ISSN: ['2041-1723']
DOI: https://doi.org/10.1038/s41467-020-20721-z